NDLI: Selective area growth of InP on nano-patterned SiO2/Si(100) substrates by molecular beam epitaxy

Content Provider	IEEE Xplore Digital Library
Author	Hasegawa, S. Yamano, A. Ahn, N.S. Cha, N.G. Kanki, T. Tanaka, H. Asahi, H.
Copyright Year	2010
Description	Author affiliation: The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan (Hasegawa, S.; Yamano, A.; Ahn, N.S.; Cha, N.G.; Kanki, T.; Tanaka, H.; Asahi, H.)
Abstract	We have investigated the selective area growth of InP on nano-patterned Si substrates with SiO2 mask by molecular beam epitaxy. By optimizing the growth conditions, the growth of one separate InP single crystallite for each Si opening has been accomplished. It is found that when single crystallites coalesced into larger grains beyond Si openings, lattice strains were introduced in the grains because of the difference in thermal expansion coefficient between Si and InP. This clearly shows that the growth of one InP single crystallite for each Si opening is indispensable for growing stress- and defect-free InP regions on SiO2 towards the application to next generation MOSFETs as the channel materials.
Starting Page	1
Ending Page	4
File Size	862727
Page Count	4
File Format	PDF
ISBN	9781424459193
ISSN	10928669
e-ISBN	9781424459223
DOI	10.1109/ICIPRM.2010.5516047
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Substrates Crystallization III-V semiconductor materials Molecular beam epitaxial growth Lattices Thermal expansion Capacitive sensors Crystalline materials Wet etching
Content Type	Text
Resource Type	Article

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