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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ohkubo, Y. Matsumoto, T. Koji, T. Amano, Y. Takagi, A. Matsuoka, Y. |
| Copyright Year | 2008 |
| Description | Author affiliation: Core Technol. R&D Center, Anritsu Corp., Atsugi (Ohkubo, Y.; Matsumoto, T.; Koji, T.; Amano, Y.; Takagi, A.; Matsuoka, Y.) |
| Abstract | The relation between effective emitter resistance, $r_{e}$ $^{eff},$ and collector current, $I_{C},$ was investigated for InGaP/GaAs HBTs and InP/InGaAs DHBTs. While the relation between $r_{e}$ $^{eff}$ and $I_{C}$ $^{-1}$ of InGaP/GaAs HBT is linear over a wide range of $I_{C},$ that of InP/InGaAs DHBT is nonlinear as if $r_{e}$ $^{eff}$ in the low collector current region increased more than the dynamic emitter resistance component that is proportional to $I_{C}$ $^{-1}.$ Although this phenomenon is enhanced in InP/InGaAs DHBTs with a thin InGaAs etching stop layer inserted in the emitter to make it controllable to form a ledge passivation structure, the etching stop layer is acceptable in high-performance high-reliability HBT applications. Using an emitter structure with an etching stop layer, we developed self-aligned InP/InGaAs DHBTs with a passivation ledge structure that attained an $f_{T}$ of 302 GHz, $f_{max}$ of 388 GHz, and $BV_{CEO}$ of 6.2 V. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 342513 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424422586 |
| ISSN | 10928669 |
| DOI | 10.1109/ICIPRM.2008.4702947 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-05-25 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Indium phosphide Indium gallium arsenide Double heterojunction bipolar transistors Passivation Gallium arsenide Heterojunction bipolar transistors Fabrication Wet etching Controllability Substrates emitter resistance Inp DHBT ledge fT fmax ideality factor |
| Content Type | Text |
| Resource Type | Article |
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