NDLI: Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development

Content Provider	IEEE Xplore Digital Library
Author	Geng-Ying Liau Heng-Kuang Lin Pei-Chin Chiu Han-Chieh Ho Jen-Inn Chyi Chih-Hsin Ko Ta-Ming Kuan Meng-Kuei Hsieh Wen-Chin Lee Wann, C.H.
Copyright Year	2010
Description	Author affiliation: Exploratory Research Division, Taiwan Semiconductor Manufacturing Company, Hsinchu City 30077, Taiwan, R. O. C. (Chih-Hsin Ko; Ta-Ming Kuan; Meng-Kuei Hsieh; Wen-Chin Lee; Wann, C.H.) \|\| Department of Electrical Engineering, National Central University, Chungli 32001, Taiwan, R. O. C. (Geng-Ying Liau; Heng-Kuang Lin; Pei-Chin Chiu; Han-Chieh Ho; Jen-Inn Chyi)
Abstract	Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In0.44Ga0.56Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In0.44Ga0.56Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 $cm^{2}/V$ s. Ti/Pt/Au and Pt/Ti/Pt/Au metals were utilized in Schottky gate metallization processes for evaluating their effects on the device performance. Considering the diffusivity of Pt metals, the devices with as-deposited and annealed Pt-based gates were characterized simultaneously and compared with the ones with Ti-based gates. The devices with Ti-based gates yielded superior dc and rf performances to those with Pt-based gates.
Starting Page	1
Ending Page	4
File Size	259856
Page Count	4
File Format	PDF
ISBN	9781424459193
ISSN	10928669
e-ISBN	9781424459223
DOI	10.1109/ICIPRM.2010.5516381
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs MODFETs Annealing Epitaxial growth III-V semiconductor materials Molecular beam epitaxial growth Gold Transconductance FETs Semiconductor device manufacture HFETs InGaSb p-channel
Content Type	Text
Resource Type	Article

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