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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mori, K. Tokutome, K. Sugou, S. |
| Copyright Year | 1995 |
| Description | Author affiliation: Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan (Mori, K.; Tokutome, K.; Sugou, S.) |
| Abstract | High-quality InP layers were fabricated on Si by direct bonding at 700/spl deg/C. Etch pit densities (EPDs) of the InP surfaces were significantly low, about 10/sup 4/ cm/sup -2/, the lowest values ever reported. The dislocation reduction mechanism was investigated by using TEM and by comparing three buffer layer structures on Si. The results indicated that the insertion of GaAs and GaP layers is important to relax the thermal stress and to reduce the propagation of threading dislocations in the buffer layer during the cooling stage (from /spl sim/10/sup 5/ to /spl sim/10/sup 4/ cm/sup -2/). Furthermore,it was suggested that the dislocation density was reduced from /spl sim/10/sup 7/ to /spl sim/10/sup 5/ cm/sup -2/ by the dislocation blocking effect of the (100) just/2" off misoriented bonded interface. The first low threshold RT pulsed operation of long-wavelength InGaAs/InGaAsP MQW mesa stripe lasers on Si substrates fabricated by direct bonding was demonstrated. The mesa stripe broad area lasers had a threshold current density of 1.7 kA/cm/sup 2/, which was comparable to the value for lasers on InP substrates. |
| Starting Page | 781 |
| Ending Page | 784 |
| File Size | 703182 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780321472 |
| DOI | 10.1109/ICIPRM.1995.522260 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-05-09 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Bonding Indium phosphide Buffer layers Thermal stresses Etching Gallium arsenide Cooling Optical pulses Indium gallium arsenide Quantum well devices |
| Content Type | Text |
| Resource Type | Article |
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