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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hin-Fai Chau Liu, W. Beam III, E.A. |
| Copyright Year | 1995 |
| Description | Author affiliation: Copr. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA (Hin-Fai Chau; Liu, W.; Beam, E.A., III) |
| Abstract | Significant progress has been made over the past few years in both the technology and microwave performance of InP-based heterojunction bipolar transistors (HBTs). Emphasis has, however, been placed mainly on transistor performance. Other critical issues have largely been ignored, including the influence of InGaAs on device thermal resistance, the role of base-collector leakage current, and the phenomenon of thermal instability. This paper first briefly reviews recent microwave results achieved to date and then investigates the aforementioned critical issues that affect their use in microwave applications. |
| Starting Page | 640 |
| Ending Page | 643 |
| File Size | 485448 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780321472 |
| DOI | 10.1109/ICIPRM.1995.522225 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-05-09 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Heterojunction bipolar transistors Indium phosphide Gallium arsenide Double heterojunction bipolar transistors Microwave devices Indium gallium arsenide Thermal conductivity Temperature dependence Thermal resistance Leakage current |
| Content Type | Text |
| Resource Type | Article |
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