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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Miyazawa, T. Kobayashi, F. Mori, H. |
| Copyright Year | 1995 |
| Description | Author affiliation: NTT Opto-Electron. Labs., Kanagawa, Japan (Miyazawa, T.; Kobayashi, F.; Mori, H.) |
| Abstract | It was found that large hollows are left between the crossed laser mesas during the hydride vapor phase epitaxy (HVPE) of semi-insulating InP (SI InP). However, SI InP layers with flat surfaces could be regrown using a channel structure and HVPE. The laser diodes buried in SI InP using this technique had threshold current as low as 22 mA and output power as high as 25 mW. Using this technique, side-injection light-controlled bistable lasers (SILC BLD) were fabricated. The obtained SILC BLDs exhibited good bistable characteristics. |
| Starting Page | 283 |
| Ending Page | 286 |
| File Size | 408328 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780321472 |
| DOI | 10.1109/ICIPRM.1995.522135 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-05-09 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Iron Indium phosphide Epitaxial growth Diode lasers Threshold current Power generation Laboratories Filling Etching Surface emitting lasers |
| Content Type | Text |
| Resource Type | Article |
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