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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Iwata, K. Asahi, H. Ogura, T. Sumino, J. Gonda, S. Ohki, A. Kawaguchi, Y. Matsuoka, T. |
| Copyright Year | 1995 |
| Description | Author affiliation: Inst. of Sci. & Ind. Res., Osaka Univ., Japan (Iwata, K.; Asahi, H.; Ogura, T.; Sumino, J.; Gonda, S.) |
| Abstract | To solve the difficulty of achieving a low resistance ohmic contact to p-type ZnSe, the use of an intermediate p-type InAlP layer to p-type ZnSe as a valence band offset reduction layer is studied by gas source MBE (molecular beam epitaxy). It is found that the surface morphology of the In/sub 0.5/Al/sub 0.5/P layers grown on [001] ZnSe becomes better as the growth temperature is decreased. The further use of the group III-flux modulated growth method produces a better surface morphology. It is found that the hole concentrations as high as 2/spl times/10/sup 18/ cm/sup -3/ are easily obtained for p-type InAlP layers grown even at low temperature of 350/spl deg/C, although a higher Be cell temperature is required than that for a 500/spl deg/C grown p-type InAlP due to decreased electrical activity of Be in InAlP. Despite the very high Be concentrations, the Be precipitation/segregation is not observed. These results suggest that the Be-doped InAlP layer can be used as an intermediate layer to form the low resistance ohmic contact to p-type ZnSe. |
| Starting Page | 183 |
| Ending Page | 186 |
| File Size | 642741 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780321472 |
| DOI | 10.1109/ICIPRM.1995.522109 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-05-09 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Temperature Zinc compounds Contact resistance Ohmic contacts Molecular beam epitaxial growth Lattices Surface morphology Electrodes Energy barrier Gallium arsenide |
| Content Type | Text |
| Resource Type | Article |
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