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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rojo-Romeo, P. Viktorovitch, P. Letartre, X. Tardy, J. Thomson, D. Simmons, J.G. |
| Copyright Year | 1995 |
| Description | Author affiliation: Lab. d'Electron., Ecole Centrale de Lyon, Ecully, France (Rojo-Romeo, P.; Viktorovitch, P.; Letartre, X.; Tardy, J.) |
| Abstract | In this work we present a comparative study of the low frequency noise in different types of HFETs based on an InP substrate. Structures with different barriers (AlInAs, InP or a combination of both) and different channels (InGaAs, InGaAsP and InP) materials were investigated. Also, experiments on plain doped AlInAs and AlGaAs resistors were performed for comparison. This study concentrates on LFN sources induced by the distribution of traps within the different layers and interfaces which constitute the structures, resulting in channel carrier number fluctuations. Experiments were made on structures using a TLM configuration. |
| Starting Page | 385 |
| Ending Page | 388 |
| File Size | 326223 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780321472 |
| DOI | 10.1109/ICIPRM.1995.522160 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-05-09 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Low-frequency noise Indium phosphide Heterojunctions FETs HEMTs Gallium arsenide Resistors MODFET circuits Indium gallium arsenide Length measurement |
| Content Type | Text |
| Resource Type | Article |
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