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| Content Provider | IEEE Xplore Digital Library | 
|---|---|
| Author | Tweet, D.J. Matsuhata, H. Shioda, R. Oyanagi, H. Kamei, H. | 
| Copyright Year | 1995 | 
| Description | Author affiliation: Electrotech. Lab., Ibaraki, Japan (Tweet, D.J.; Matsuhata, H.; Shioda, R.; Oyanagi, H.) | 
| Abstract | Using x-ray diffraction and transmission electron microscopy we have found that InAs/sub 1-x/P/sub x/ films deposited on InP(001) substrates with organometallic vapor phase epitaxy grow in an unusual phase-separated island growth mode related to strain. Initially, pseudomorphic islands of intermediate composition form and grow only until some point in the relaxation process, possibly a critical value of the strain, after which islands of the intended composition begin to appear. Furthermore, both types of islands are found to penetrate deeply into the substrate. | 
| Starting Page | 206 | 
| Ending Page | 209 | 
| File Size | 491438 | 
| Page Count | 4 | 
| File Format | |
| ISBN | 0780321472 | 
| DOI | 10.1109/ICIPRM.1995.522115 | 
| Language | English | 
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Publisher Date | 1995-05-09 | 
| Access Restriction | Subscribed | 
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Subject Keyword | Indium phosphide Substrates Capacitive sensors Epitaxial growth X-ray scattering Molecular beam epitaxial growth X-ray diffraction Transmission electron microscopy Atomic layer deposition Laboratories | 
| Content Type | Text | 
| Resource Type | Article | 
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