NDLI: Characterization of nanofloating gate memory with ZnO nanoparticles embedded in polymeric matrix

Content Provider	IEEE Xplore Digital Library
Author	Eun Kyu Kim Jae-Hoon Kim Dong Uk Lee Gun Hong Kim Young-Ho Kim
Copyright Year	2005
Description	Author affiliation: Dept. of Phys., Hanyang Univ., Seoul, South Korea (Eun Kyu Kim; Jae-Hoon Kim; Dong Uk Lee)
Abstract	In this study, 10nm thick Zn was deposited with onto Si and SiO/sub 2/ wafer substrates. SiO/sub 2/ thickness was 13.5nm. The PAA was spin coated onto Zn film substrate. This PAA is biphenyltetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid type. PAA/Zn layer were held to react with the metal layer at room temperature for 24 hours in vacuum desiccators. The Pl/Zn layer were cured at 350 /spl deg/C and 400 /spl deg/C for 1 /spl sim/ 2 hours in N/sub 2/ atmosphere after drying at 135 /spl deg/C for 30 min. For the electrical characterization of ZnO nanoparticle devices, capacitance-voltage (C-V) measurement system was constructed with a HP4280A and Boonton 7200 capacitance meter, N/sub 2/ and He cryostat (15 - 700 K), LS330 temperature controller and a DAQ system. Results imply that ZnO nanoparticle embedded in polymeric matrix system can be applied in a single-electron device and nanofloating gate memory device by using the quantum effect of the nanoparticles.
Sponsorship	Japan Soc. of Appl. Phys
Starting Page	180
Ending Page	181
File Size	601719
Page Count	2
File Format	PDF
ISBN	4990247221
DOI	10.1109/IMNC.2005.203797
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-25
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. of Applied Physics
Subject Keyword	Zinc oxide Nanoparticles Polymers Substrates Capacitance-voltage characteristics Temperature Atmosphere Atmospheric measurements Capacitance measurement Electric variables measurement
Content Type	Text
Resource Type	Article

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