NDLI: 3D rigorous simulation of EUV defective masks using modal method by Fourier expansion

Content Provider	IEEE Xplore Digital Library
Author	Smaali, R. Besacier, M. Granet, G. Schiavone, P.
Copyright Year	2005
Description	Author affiliation: Lab. des Technol. de la Microelectronique CNRS, Grenoble, France (Smaali, R.; Besacier, M.)
Abstract	Simulation is recognized to play a significant role in the optimization of the lithography process. This is especially true for emerging technologies such as EUV. Indeed, the availability of EUV exposure data is still limited and when present these exposures are performed on exposure tools that are still far from the final production equipment. We have already shown (Schiavone, et al., 2001) that electromagnetic simulation based on modal methods (in our case modal method by Fourier expansion also known as RCWA) is an efficient alternative for the modeling of EUV lithography. The main advantage of modal methods is that their convergence decreases relatively slowly when the ratio of the feature size to the wavelength increases. This makes them advantageous for the short wavelength of EUV. In this paper, we recall the basic principle of the modal method by Fourier expansion and its major characteristics and performance when applied to 3D simulation. We also give several results obtained with the code for defective mask topographies. These results emphasize the influence of the oblique illumination on the printed feature size and position depending on the shape and density of the mask features (contact holes, posts, ...). It also analyzes the influence of a defect on the reflected field when it is in the vicinity of the absorber.
Sponsorship	Japan Soc. of Appl. Phys
Starting Page	86
Ending Page	87
File Size	744812
Page Count	2
File Format	PDF
ISBN	4990247221
DOI	10.1109/IMNC.2005.203750
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-25
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. of Applied Physics
Subject Keyword	Lithography Surfaces Gratings Finite difference methods Nonhomogeneous media Shape Computational modeling Polarization Chromium Optimized production technology
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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