NDLI: Aerial image characteristics of modified absorber model for extreme ultraviolet lithography (EUVL)

Content Provider	IEEE Xplore Digital Library
Author	In-Yong Kang Jinho Ahn Hye-Keun Oh Yong-Chae Chung
Copyright Year	2005
Description	Author affiliation: Dept. of Ceramic Eng., Hanyang Univ., Seoul, South Korea (In-Yong Kang)
Abstract	The extreme ultraviolet lithography (EUVL) is the most promising technique for manufacturing ultra-large-scale integration (ULSI) devices for the sub 50-nm technology node (Gwynn et al., 1998). The pattern image characteristics of EUVL mask has directly bearing on the lithographic performance and the accuracy of the resist imaging (Yan et al., 2000). For the oblique illumination on a EUVL mask in the exposure systems, the geometrical shadowing effect by the patterned absorber stack becomes critical issue in the pattern transfer process. Therefore, many research efforts have been focused on the absorber design to maximize the optical performance (Deng et al., 2003; Deng et al., 2004). In this work, the pattern printability of modified absorber models with various sidewall angles was quantitatively investigated by simulating aerial image intensity transferred through the system.
Sponsorship	Japan Soc. of Appl. Phys
Starting Page	84
Ending Page	85
File Size	794213
Page Count	2
File Format	PDF
ISBN	4990247221
DOI	10.1109/IMNC.2005.203749
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-25
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. of Applied Physics
Subject Keyword	Ultraviolet sources Lithography Ultra large scale integration Manufacturing Resists Optical imaging Lighting Shadow mapping Optical design Geometrical optics
Content Type	Text
Resource Type	Article

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