NDLI: An improved understanding of IGBT behavior under thermal stress

Content Provider	IEEE Xplore Digital Library
Author	Ly, B. Merabet, A. Zegadi, A.
Copyright Year	2008
Description	Author affiliation: Dept. OMP, F.A.S. Univ., Setif (Ly, B.; Merabet, A.)
Abstract	Two dimensional numerical simulation is carried out to demonstrate the static and dynamic performance of two commercial IGBTs, IRGBC40F for International Rectifier and IXHG40N60A for IXYS and to analyze the forward voltage drops of IGBTs (IR and IXYS) as function of its conception and of temperature. Furthermore, this paper provides detailed analyses of the (dv/dt) capability for (IR and IXYS) IGBTs devices and examination of their response at turn-off with variations in gate resistor, Cd freewheeling diode capacitance and in temperature. At the same time, we try to study and investigate the evolution of electrical properties of IGBT submitted to thermal stress where the influence of temperature during IGBT operation is dominant. Thermal stress technique can be used to simulated and evaluated natural ageing and its resulting parameters degradation of the device when the later found to operate under normal conditions. Our study is then validated by use of two (2D) dimensional modeling tool (Pspice, Spice). The authors hope that this paper can contribute to the understanding the dv/dt capability, to detect impending degradation under thermal stress of commercial IGBT (IR, IXYS) devices operation, show how it relates to some underlying physical mechanisms and achieve high power switching efficiency, reduced cost, improved reliability and reduced parasitic. Comparison between measurements and simulation shows good agreement.
Starting Page	189
Ending Page	192
File Size	256950
Page Count	4
File Format	PDF
ISBN	9781424418817
DOI	10.1109/ICMEL.2008.4559255
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	Serbia & Montenegro
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal stresses Insulated gate bipolar transistors Temperature Thermal degradation Numerical simulation Rectifiers Performance analysis Voltage Resistors Diodes (dv/dt) Capability Thermal behavior degradation IGBT thermal stress
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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