NDLI: Photoacoustic elastic bending method: Investigation of the surface recombination states

Content Provider	IEEE Xplore Digital Library
Author	Todorovic, D.M. Rabasovic, M.D. Markushev, D.D. Smiljanic, M.
Copyright Year	2008
Description	Author affiliation: Center for Multidiscipl. Studies, Univ. of Belgrade, Belgrade (Todorovic, D.M.)
Abstract	The recombination processes of surface modified Si samples by the PA elastic bending method were investigated. The experimental PA elastic bending signals were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration) where the sample is mechanically clamped on the edge. The PA amplitude and phase spectra were measured and analyzed, as a function of the modulation frequency for different surface quality of Si wafer. The samples were the disks of intact wafers of Si with different thicknesses, and discs with mechanically treated surfaces. The experimental results and theoretical analyze showed a strong dependence of the PA elastic bending signal due the recombination processes on the surface defect states. These results show a clear influence of the process of the surface modification on the thermodiffusion, thermoelastic and electronic deformation mechanisms of the PA elastic bending signal.
Starting Page	561
Ending Page	564
File Size	258134
Page Count	4
File Format	PDF
ISBN	9781424418817
DOI	10.1109/ICMEL.2008.4559347
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	Serbia & Montenegro
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Surface treatment Signal processing Mechanical variables measurement Frequency measurement Phase measurement Phase modulation Amplitude modulation Frequency modulation Signal analysis Spontaneous emission
Content Type	Text
Resource Type	Article

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