NDLI: Multi-cell effects during unclamped inductive switching of Power MOSFETs

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Proceedings of International Conference on Microelectronics

Multi-cell effects during unclamped inductive switching of Power MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Pawel, I. Siemieniec, R. Rosch, M.
Copyright Year	2008
Description	Author affiliation: Infineon Technol. Austria AG, Villach (Pawel, I.; Siemieniec, R.; Rosch, M.)
Abstract	In this paper, we describe the crucial dependence of avalanche behavior on epitaxial layer thickness and gate resistance during undamped inductive switching (TJIS) especially for high currents for power MOSFET devices employing field-plate compensation in the drift region. All transient simulations were performed using Medici's mixed-mode simulation approach including self-heating. A higher epitaxial layer thickness eventually resulted in a higher avalanche ruggedness but also in higher on-state resistance. Thus, a trade-off exists.
Starting Page	163
Ending Page	166
File Size	264123
Page Count	4
File Format	PDF
ISBN	9781424418817
DOI	10.1109/ICMEL.2008.4559248
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	Serbia & Montenegro
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Voltage Epitaxial layers Immune system Medical simulation Inductance Resistors Pulse measurements Silicon Region 2
Content Type	Text
Resource Type	Article

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