NDLI: Correlation between flicker noise and current linearity in ferromagnetic-GaAs-metal tunnel contacts

Content Provider	IEEE Xplore Digital Library
Author	Fobelets, K. Rumyantsev, S. Van Roy, W. Vanheertum, R. Shur, M.S.
Copyright Year	2008
Description	Author affiliation: Dept. of Electr. & Electron. Eng., Imperial Coll. London, London (Fobelets, K.)
Abstract	The low frequency noise behavior of the in-plane current through ferromagnetic tunnel contacts on a III-V semiconductor is evaluated. Measurements are performed between ferromagnetic and ohmic contacts and between the two ferromagnetic contacts which have different coercive fields in a lateral [Ta/IrMn/CoFe]/AIOx/GaAs/AIOx/[CoFe/NiFe/Ta] structure. The resistance and current noise spectral density of the CoFe/NiFe/Ta contact are higher than that of Ta/IrMn/CoFe. Strong generation-recombination noise is found in high resistivity devices. It is assumed that the deep level traps are due to DX centers in the AlGaAs layer, possibly resulting from the diffusion of Ni into the semiconductor.
Starting Page	553
Ending Page	556
File Size	282032
Page Count	4
File Format	PDF
ISBN	9781424418817
DOI	10.1109/ICMEL.2008.4559345
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	Serbia & Montenegro
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	1f noise Linearity Semiconductor device noise Low-frequency noise III-V semiconductor materials Electrical resistance measurement Performance evaluation Ohmic contacts Gallium arsenide Contact resistance
Content Type	Text
Resource Type	Article

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