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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jorda, X. Tournier, D. Vellvehi, M. Perez, A. Perez, R. Godignon, P. Millan, J. |
| Copyright Year | 2005 |
| Description | Author affiliation: Centre Nacional de Microelectron., Barcelona, Spain (Jorda, X.; Tournier, D.; Vellvehi, M.; Perez, A.; Perez, R.; Godignon, P.; Millan, J.) |
| Abstract | SiC Schottky barrier diodes (SBD) are commercially available in the 600 V breakdown voltage range and 1.2 kV SiC SBDs have been announced. In this paper we compare the behavior of recently fabricated high-current 1.2 kV SBD with that of equivalent Si diodes, underlining the high temperature working operation capability (up to 200/spl deg/C), Lower reverse leakage current is obtained using Ni instead of Ti (the most spread solution) for the Schottky contact. The temperature dependence of forward characteristics, reverse leakage current and switching recovery performances have been analyzed. |
| Sponsorship | Ministerio de Educacion y Ciencia Generalitat de Catalunya Diputacio de Tarragona Red IberNAM LEAR Corp. "La Caixa" Universitat Rovira i Virgili IEEE |
| Starting Page | 87 |
| Ending Page | 90 |
| File Size | 687312 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780388100 |
| DOI | 10.1109/SCED.2005.1504315 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-02-02 |
| Publisher Place | Spain |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Schottky diodes Silicon carbide Semiconductor diodes Voltage Schottky barriers Temperature dependence Leakage current Rectifiers Fabrication Substrates |
| Content Type | Text |
| Resource Type | Article |
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