NDLI: PT-IGBT and freewheeling diode for 3.3 kV using lifetime control techniques and low-efficiency emitters

Content Provider	IEEE Xplore Digital Library
Author	Netzel, M. Lerner, R. Siemieniec, R. Lutz, J.
Copyright Year	2002
Description	Author affiliation: Dept. of Solid- State Electron., Technische Hochschule Ilmenau, Germany (Netzel, M.; Lerner, R.; Siemieniec, R.; Lutz, J.)
Abstract	The adjustment of emitter efficiency by variation of doping profiles or application of lifetime control techniques such as irradiation of electrons and helium are two generally recognized concepts for the improvement of power device characteristics. In this work both concepts were studied by use of device simulation for the development of an IGBT and freewheeling diode chipset for 3.3 kV. Simulations were performed using an extended recombination model and recombination center data taken from measurements at different irradiated devices. Finally, this lead to the manufacturing of an IGBT using low-emitter efficiency and an irradiated freewheeling diode. The experimental results are in good accordance with the previously performed simulations and give evidence of the capabilities of present device simulation tools.
Sponsorship	IEEE Electron Devices Soc. IEEE-Solid-State Circuits Soc
Starting Page	167
Ending Page	170
File Size	749413
Page Count	4
File Format	PDF
ISBN	0780372352
DOI	10.1109/MIEL.2002.1003166
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-12
Publisher Place	Yugoslavia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Diodes Insulated gate bipolar transistors Spontaneous emission Doping profiles Electron emission Helium Character recognition Performance evaluation Semiconductor device measurement Manufacturing
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

An assessment of modern IGBT and anti-parallel diode behaviour in hard-switching applications

1200V Emcon4 freewheeling diode - a soft alternative

Hybrid 3.3 kV/450 A half-bridge IGBT power module with SiC Schottky barrier diodes

1200V reverse conducting IGBT

3.3 kV PT-IGBT with voltage-sensor monolithically integrated

Interaction between IGBT, diode and parasitic inductances during short-circuit type 3

Thermal design of converters using discrete power components incorporating an IGBT and a freewheeling diode

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user-friendly) power devices

CSTBT (III) as the next generation IGBT

PT-IGBT and freewheeling diode for 3.3 kV using lifetime control techniques and low-efficiency emitters

Similar Documents

An assessment of modern IGBT and anti-parallel diode behaviour in hard-switching applications

1200V Emcon4 freewheeling diode - a soft alternative

Hybrid 3.3 kV/450 A half-bridge IGBT power module with SiC Schottky barrier diodes

1200V reverse conducting IGBT

3.3 kV PT-IGBT with voltage-sensor monolithically integrated

Interaction between IGBT, diode and parasitic inductances during short-circuit type 3

Thermal design of converters using discrete power components incorporating an IGBT and a freewheeling diode

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user-friendly) power devices

CSTBT (III) as the next generation IGBT

PT-IGBT and freewheeling diode for 3.3 kV using lifetime control techniques and low-efficiency emitters