NDLI: Trench emitter IGBT with lateral and vertical MOS channels

Content Provider	IEEE Xplore Digital Library
Author	Young-Su Kang Hyoung-Woo Kim Yearn-Ik Choi Sang-Koo Chung
Copyright Year	2002
Description	Author affiliation: Sch. of Electron. Eng., Ajou Univ., Suwon, South Korea (Young-Su Kang; Hyoung-Woo Kim; Yearn-Ik Choi; Sang-Koo Chung)
Abstract	A dual gate trench emitter IGBT structure with lateral and vertical MOS channels is proposed and studied numerically using the MEDICI device simulator. The on-state forward voltage drop, latch-up current density, turn-off time and breakdown voltage of the proposed structure are compared with those for the conventional DMOS-IGBT and trench gate IGBT (TIGBT) structures. Reduction of the on-resistance by at least 32% is obtained in the proposed structure due to enhancement of the carrier density at the edge of the drift region by increasing electron current through both channels. In addition, the trench emitter of the proposed structure increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage, leading to a broad SOA (safe operating area).
Sponsorship	IEEE Electron Devices Soc. IEEE-Solid-State Circuits Soc
Starting Page	163
Ending Page	166
File Size	256842
Page Count	4
File Format	PDF
ISBN	0780372352
DOI	10.1109/MIEL.2002.1003165
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-12
Publisher Place	Yugoslavia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Current density Charge carrier density Threshold voltage Medical simulation Electrons Circuit simulation Equivalent circuits Degradation Roads
Content Type	Text
Resource Type	Article

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