NDLI: Investigation of surface energy states on Si by photoacoustic spectroscopy

Content Provider	IEEE Xplore Digital Library
Author	Todorovic, D.M. Smiljanic, M.
Copyright Year	2002
Description	Author affiliation: Center for Multidisciplinary Studies, Belgrade Univ., Serbia (Todorovic, D.M.)
Abstract	The spectral and dynamic characteristics of surface energy states on Si wafers are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of the excitation optical beam by a PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 /spl Omega/cm) with various surface qualities were studied at room temperature in the optical energy beam excitation range from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The different PA amplitude spectra of incoming Si wafers and Si wafers with mechanically roughened surfaces, for various modulation frequencies, indicate the energy distribution and the dynamics of the surface electronic states (SES).
Sponsorship	IEEE Electron Devices Soc. IEEE-Solid-State Circuits Soc
Starting Page	397
Ending Page	400
File Size	226135
Page Count	4
File Format	PDF
ISBN	0780372352
DOI	10.1109/MIEL.2002.1003221
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-12
Publisher Place	Yugoslavia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Energy states Spectroscopy Optical surface waves Frequency modulation Optical modulation Optical beams Rough surfaces Surface roughness Amplitude modulation Frequency measurement
Content Type	Text
Resource Type	Article

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