NDLI: Hybrid 3.3 kV/450 A half-bridge IGBT power module with SiC Schottky barrier diodes

Content Provider	IET Digital Library
Author	Li, Daohui Luo, Haoze Huang, Yue Li, Xiang Qi, Fang Packwood, Matthew Luo, Haihui Chen, Ximing Li, Chengzhan Wang, Yangang Dai, Xiaoping Liu, Guoyou
Abstract	This work presents a hybrid 3.3 kV/450 A insulated-gate bipolar transistor (IGBT) power module, utilising the half-bridge topology. In contrast to the traditional fashion, each IGBT chip in this module is allocated with two anti-parallel silicon carbide (SiC) Schottky barrier diodes (SBDs). Each SBD describes smaller footprint than the conventionally used silicone (Si) based fast recovery diode at this voltage and current level. By adopting smaller SiC SBDs in this hybrid-style packaging structure, the SBD chip yield can be greatly improved, without any additional fabrication cost. To benchmark the advantages of this hybrid power module over the Si-based counterpart, both power modules are designed, fabricated as well as tested statically and dynamically. It is shown that while both types show similar thermal behaviour, the hybrid power module describes much lower IGBT turn-on current overshooting, diode reverse recovery loss and IGBT turn-on loss. Based on the measured results, the power losses of both modules under a three-phase inverter operation condition are calculated, showing that the hybrid module has considerably lower power losses and junction temperature rise.
Starting Page	405
Ending Page	412
Page Count	8
ISSN	17554535
Volume Number	13
e-ISSN	17554543
Issue Number	Issue 3, Feb (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/13/3
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2019.0412
Journal	IET Power Electronics
Publisher Date	2019-09-10
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Anti-parallel Silicon Carbide Schottky Barrier Diodes Bipolar Transistor Current 450.0 A Current Level Diode Reverse Recovery Loss Half-bridge IGBT Power Module Half-bridge Topology Hybrid Insulated-gate Bipolar Transistor Power Module Hybrid Power Module Hybrid-style Packaging Structure IGBT Chip IGBT Turn-on Current Overshooting IGBT Turn-on Loss Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Junction And Barrier Diode Junction Temperature Rise Module Power Loss Product Packaging SBD Chip Yield Schottky Barriers Schottky Diode Semiconductor Device Packaging SiC Silicon Silicon Carbide Schottky Barrier Diode Silicon Compound Silicone Based Fast Recovery Diode Thermal Behaviour Three-phase Inverter Operation Condition Voltage 3.3 KV Voltage Level Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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