NDLI: Unified drain current model for independently driven double gate MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Syamal, B. Sarkar, C.K. Dutta, P. Mohankumar, N.
Copyright Year	2010
Description	Author affiliation: Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata-700032, India (Syamal, B.; Sarkar, C.K.) \|\| School of Technology, Department of Electronics & Telecommunication Engineering, KIIT University, Bhubaneswar, Orissa-751024, India (Dutta, P.) \|\| SKP Engineering College, Thiruvannamalai-60661, Tamil Nadu, India (Mohankumar, N.)
Abstract	A generic surface potential based current voltage (I–V) model for heavily doped asymmetric Double Gate MOSFET is presented. The model is derived from the 1-D Poisson equation with all the charge terms included and the channel potential is solved for the asymmetric operation of DG MOSFET based on the Newton Raphson Iterative method. A non charge sheet based drain current model based on the Pao-Sah's double integral method is formulated in terms of front and back gate surface potentials at the source and drain end. The model is able to clearly show the dependence of the front and back surface potentials and the drain current on the terminal voltages, gate oxide thicknesses, channel doping concentrations and the Silicon body thickness and a good agreement is observed with the 2-D numerical simulation results.
Starting Page	44
Ending Page	47
File Size	1440716
Page Count	4
File Format	PDF
ISBN	9781612841496
e-ISBN	9781612841519
DOI	10.1109/ICM.2010.5696185
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-19
Publisher Place	Egypt
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Silicon MOSFETs Electric potential Predictive models Semiconductor process modeling Doping Short Channel Effects Asymmetric double gate MOSFET Pao-Sah's double integral Poisson's equation
Content Type	Text
Resource Type	Article

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