NDLI: Nanoindentation for quality control of ULK films

Content Provider	IEEE Xplore Digital Library
Author	Yeap, K.B. Zeng, K. Hangen, U. Zschech, E.
Copyright Year	2011
Description	Author affiliation: Fraunhofer Institute for Nondestructive Testing, Maria-Reiche-Str. 2, 01109 Dresden, Germany (Yeap, K.B.; Zschech, E.) \|\| Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, 117675, Singapore (Zeng, K.) \|\| Hysitron Inc., Technologiezentrum am Europaplatz, Dennewart-Str. 25/27, 52068 Aachen, Germany (Hangen, U.)
Abstract	The structural integrity of ultra low-k (ULK) dielectrics is highly dependent on their mechanical properties, e.g. fracture toughness, adhesion and elastic modulus. For materials and process development, the ULK interfacial adhesion can be determined applying four-point-bending (FPB) and double-cantilever-beam (DCB) methods in out-of-fab labs. On the other hand, the characterization of interfacial adhesion is also very important for process control and quality assurance in-line/at-line. The ability to detect a defective ULK films at an early processing step could potentially save processing and material cost. Therefore, the development of the current experimental methodology for the purpose of in-line/at-line mechanical properties evaluation is of great interest for semiconductor industry and tool suppliers. In this paper, a wedge indentation method particularly suitable for ULK quality control is described. The indentation experiment can be conducted on an as-deposited ULK film, without further sample preparation. Furthermore, a simple analysis and a straight forward experimental methodology are introduced, allowing a short “time-to-data”. Interfacial delaminations of the ULK films are observed after the wedge indenter has been penetrated into the film at a critical penetration depth. The indentation stress that induced the interfacial delamination (σo) was found to be proportional to the indentation volumetric strain. Therefore, assuming that the energy release rate is equivalent to the interfacial adhesion, the interfacial adhesion of the ULK films is given as Γ=(1−νf $^{2})tσo^{2}/2Ef.$ The interfacial adhesion values as concluded from this analysis have been validated through a sufficient number of indentation experiments on several ULK materials and film thicknesses. In addition to the wedge indentation experiment, several independent simulation studies and four-point-bending experiments have shown consistent interfacial adhesion values, compared to the results from the analysis mentioned above. The wedge indentation method developed in this study has a strong potential for semiconductor industry application, especially as a quality control technique.
Starting Page	1
Ending Page	3
File Size	279599
Page Count	3
File Format	PDF
ISBN	9781457705038
e-ISBN	9781457705021
DOI	10.1109/IITC.2011.5940290
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-08
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Adhesives Films Strain Stress Delamination Geometry
Content Type	Text
Resource Type	Article

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