NDLI: Investigations on Ru-Mn films as plateable Cu diffusion barriers

Content Provider	IEEE Xplore Digital Library
Author	Wojcik, H. Kaltofen, R. Krien, C. Merkel, U. Wenzel, C. Bartha, J.W. Friedemann, M. Adolphi, B. Liske, R. Neumann, V. Geidel, M.
Copyright Year	2011
Description	Author affiliation: Fraunhofer Center for Nanotechnologies (CNT), Dresden, Germany (Liske, R.) \|\| Globalfoundries Module Two LLC & CoKG, Dresden, Germany (Friedemann, M.) \|\| Semiconductor & Microsystems Technology Laboratory (IHM), TU Dresden, 01062, Germany (Wojcik, H.; Merkel, U.; Wenzel, C.; Bartha, J.W.; Adolphi, B.; Neumann, V.; Geidel, M.) \|\| Leibniz Institute For Solid State & Materials Research (IFW), Dresden, Germany (Kaltofen, R.; Krien, C.)
Abstract	In this study Ru-Mn alloys are discussed in terms of some of the major questions that are typically associated with the development of new types of barriers. First, the Cu diffusion barrier performance after annealing at high temperatures and under subsequent bias temperature stress is investigated, on SiO2 and on low-k dielectrics. Second, the origin of the barrier performance - either a self forming barrier caused by segregation of an alloyed element, or the stuffing of grain boundaries - is investigated, since this is of importance with regard to an electromigration barrier at the bottom of a via. Third, Cu plating and Cu adhesion behavior are addressed, since they are also important with regard to electromigration, specifically along the side walls of trenches. Fourth, the blocking of oxygen diffusion is investigated. Furthermore, down-scaling of the Mn content to a lowest possible level is pursued in order to reduce line and via resistances.
Starting Page	1
Ending Page	3
File Size	519467
Page Count	3
File Format	PDF
ISBN	9781457705038
e-ISBN	9781457705021
DOI	10.1109/IITC.2011.5940262
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-08
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Manganese Films Annealing Dielectrics Silicon Adhesives oxygen diffusion barrier Ru-Mn Cu diffusion barrier direct Cu plating Cu adhesion bias temperature stress
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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