NDLI: Investigation of ultra-thin Al2O3 film as Cu diffusion barrier on low-k (k=2.5) dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Shao-Feng Ding Qi Xie Fei Chen Hai-Sheng Lu Shao-Ren Deng Detavernier, C. Guo-Ping Ru Yu-Long Jiang Xin-Ping Qu
Copyright Year	2011
Description	Author affiliation: State Key lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China (Shao-Feng Ding; Fei Chen; Hai-Sheng Lu; Guo-Ping Ru; Yu-Long Jiang; Xin-Ping Qu) \|\| Department of Solid State Science, Ghent University, Krijgslaan 281/S1, B-9000, Belgium (Qi Xie; Shao-Ren Deng; Detavernier, C.)
Abstract	Ultrathin Al2O3 films were deposited by PEALD as Cu diffusion barrier on low-k (k=2.5) material. The thermal stability and electrical properties of the Cu/low k system with Al2O3 layers with different thickness were studied after annealing. The AES, TEM and EDX results revealed that the ultrathin Al2O3 films are thermally stable and have excellent Cu diffusion barrier performance. The electrical measurements of dielectric breakdown and TDDB tests further confirmed that the ultrathin Al2O3 film is a potential Cu diffusion barrier in the Cu/low-k interconnects system.
Starting Page	1
Ending Page	3
File Size	485883
Page Count	3
File Format	PDF
ISBN	9781457705038
e-ISBN	9781457705021
DOI	10.1109/IITC.2011.5940321
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-08
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Aluminum oxide Films Annealing Silicon Dielectrics Thermal stability
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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