NDLI: Rdson behavior in various MOSFET families

Content Provider	IEEE Xplore Digital Library
Author	Petit, P. Aillerie, M. Zegaoui, A. Sawicki, J.-P. Charles, J.-P.
Copyright Year	2011
Description	Author affiliation: LMOPS, University Paul Verlaine of Metz and Supelec, 2 rue Edouard Belin, 57070, France (Petit, P.; Aillerie, M.; Zegaoui, A.; Sawicki, J.-P.; Charles, J.-P.)
Abstract	MOSFET are widely used for energy conversion and are must appropriated to photovoltaic systems up to 200VDC. Efficiency of these systems is very critical point. Efficiency of converters is mainly related to losses of its components and the MOSFET appears as one the main original. for the conversion of energy, it is very important to insure the higher efficiency as possible. In a first approach we studied MOSFET used in a switching mode. The losses in the transistor are directly linked to the Rdson value. As anterior studies have shown a linear dependence between the Rdson and the voltage supported by the transistor, we can predict a linear increasing of the losses for high output voltage. Our investigations clearly show that the MOSFET losses are greater than they would have to be, especially for high voltages, and our investigations on a large sample of transistors families clearly shows that this law have to be revisited. Indeed simulations show an increase much faster than expected of losses when voltage Vds increases. After compiling data on many power MOSFETs family data sheets a new behavioral model, including the fast evolution of Rdson, for high voltage, has been purposed. This model includes two parameters to be adjusted to a given MOSFET family and which make possible the losses calculation of the concerned family.
Starting Page	353
Ending Page	357
File Size	789130
Page Count	5
File Format	PDF
ISBN	9781424493104
e-ISBN	9781424493128
e-ISBN	9781424493111
DOI	10.1109/ISIE.2011.5984184
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-27
Publisher Place	Poland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Mathematical model Computational modeling Semiconductor process modeling Power MOSFET Software Rdson Switch losses efficiency high voltage conversion Vds Vdsmax MOSFET
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in