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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Suga, T. Masakate, A. Wenhua Yang Matsuoka, N. |
| Copyright Year | 2014 |
| Description | Author affiliation: Dept. Precision Eng., Univ. of Tokyo, Tokyo, Japan (Suga, T.; Masakate, A.; Wenhua Yang; Matsuoka, N.) |
| Abstract | The paper describes a new process of Cu-Cu direct bonding at a temperature lower than 200°C in atmospheric pressure. The method consists of reduction process of Cu oxide using formic acid treatment and subsequent generation of Cu nano-particles by means of Pt catalyst. The main idea of the proposed method is that due to Pt catalytic effect, combined to the conventional formic acid treatment, a part of the formic acid is decomposed to generate hydrogen radicals to reduce the oxide of the Cu surface, CuO and produce Cu formats very effectively. As the result, nano-particles of Cu are precipitated from the formats on the Cu surface and a tight bonded interface can be formed at a temperature below a 200°C. Cu surface was heated in water vapor to enhance the oxidation process and compared regarding to the precipitation of the Cu nano-particles. |
| Sponsorship | Japan Coun. CPMT Chapt. |
| Starting Page | 644 |
| Ending Page | 647 |
| File Size | 870593 |
| Page Count | 4 |
| File Format | |
| e-ISBN | 9784904090114 |
| DOI | 10.1109/ICEP.2014.6826759 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-04-23 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | JIEP |
| Subject Keyword | Heat treatment Catalysst Water heating Surface morphology Formic acid Copper Bonding Plasma temperature Direct bonding Surface treatment Low temperature |
| Content Type | Text |
| Resource Type | Article |
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