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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cayron, C. Tran, M. Robert, Y. Enard, A. Vinet, E. Garcia, M. Lecomte, M. Teisseire, L. Parillaud, O. Krakowski, M. |
| Copyright Year | 2011 |
| Description | Author affiliation: Alcatel-Thales III-V Lab, 1 avenue Auguste Fresnel, 91767 Palaiseau cedex, France (Cayron, C.; Tran, M.; Robert, Y.; Enard, A.; Vinet, E.; Garcia, M.; Lecomte, M.; Teisseire, L.; Parillaud, O.; Krakowski, M.) |
| Abstract | We obtain (Fig. 1) a low threshold current at 30°C around 50mA and a high slope efficiency of 1W/A. At this measurement temperature, we have also obtained the D2 line of Cs (852.12nm) for a current of 170mA and so, a high optical intensity of 110mW (Fig. 2). The side mode suppression ratio (SMSR) for these operating conditions is higher than 50dB. We also measured by the self-heterodyne method the linewidth of our DFB laser at 30°C. We obtained at the D2 line of Cs (Fig.3) a very narrow linewidth of 200kHz for a white noise approximation (lorentzian fit) and 446kHz for a low frequency noise approximation (Gaussian fit). Furthermore, we can see (Fig.4) the usual decrease of the linewidth with the optical power, without any further increase at high power. From this linewidth evolution with power the Henry's factor is evaluated to be around 2.5. |
| Starting Page | 1 |
| Ending Page | 1 |
| File Size | 217849 |
| Page Count | 1 |
| File Format | |
| ISBN | 9781457705335 |
| e-ISBN | 9781457705328 |
| DOI | 10.1109/CLEOE.2011.5942600 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-05-22 |
| Publisher Place | Germany |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | High power Optimized KL Narrow linewidth High SMSR 852nm Cs pumping DFB laser Al-free regrowth Aluminum-free active region Atomic clocks |
| Content Type | Text |
| Resource Type | Article |
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