NDLI: Progress on InGaAs/GaAsSb based terahertz quantum cascade lasers

Content Provider	IEEE Xplore Digital Library
Author	Deutsch, C. Detz, H. Benz, A. Nobile, M. Andrews, A.M. Klang, P. Schrenk, W. Strasser, G. Unterrainer, K.
Copyright Year	2011
Description	Author affiliation: Institute of Solid-State Electronics and Center for Micro- and Nanostructures, Vienna University of Technology, Floragasse 7/362, 1040, Austria (Detz, H.; Nobile, M.; Andrews, A.M.; Klang, P.; Schrenk, W.; Strasser, G.) \|\| Photonics Institute and Center for Micro- and Nanostructures, Vienna University of Technology, Gusshausstrasse 27-29/387, 1040, Austria (Deutsch, C.; Benz, A.; Unterrainer, K.)
Abstract	An alternative material system might be the key for higher operating temperatures of terahertz quantum cascade lasers (THz QCLs) [1]. At present, the material choice for THz QCLs is GaAs/AlGaAs, providing low conduction band offsets (∼100–150 meV). This property is advantageous for terahertz active regions to keep the barrier thicknesses at reasonable values. In contrast, the material choice for midinfrared QCLs is InGaAs/InAlAs lattice-matched to InP for several reasons: the conduction band offset is 520 meV which allows short wavelength operation. A lower effective mass (0.043m0 for InGaAs, 0.067m0 for GaAs) results in larger dipole matrix elements and in turn yields higher optical gain. Despite the low effective InGaAs electron mass, THz QCLs demonstrated in this material system are not competitive since extremely thin barriers have to be employed in the active region [2] or a trade-off for a more robust design has to be done [3].
Starting Page	1
Ending Page	1
File Size	359094
Page Count	1
File Format	PDF
ISBN	9781457705335
e-ISBN	9781457705328
DOI	10.1109/CLEOE.2011.5942516
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-22
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Indium gallium arsenide Nanostructures Quantum cascade lasers Indium phosphide Photonics
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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