NDLI: 2.08 µm Ho:KLu(WO4)2 laser resonantly pumped by a diode laser

Content Provider	IEEE Xplore Digital Library
Author	Jambunathan, V. Mateos, X. Pujol, M.C. Carvajal, J.J. Aguilo, M. Diaz, F. Griebner, U. Petrov, V.
Copyright Year	2011
Description	Author affiliation: Física i Cristal·lografía de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili (URV), Campus Sescelades c/Marcel·lí Domingo, s/n, E - 43007 Tarragona, Spain (Jambunathan, V.; Mateos, X.; Pujol, M.C.; Carvajal, J.J.; Aguilo, M.; Diaz, F.) \|\| Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max-Born-Strasse 2A, D -12489 Berlin, Germany (Griebner, U.; Petrov, V.)
Abstract	Infrared solid-state lasers based on the $Ho^{3+}$ (Ho) ion operating slightly above 2 µm have potential applications in the fields of medicine, remote sensing and as pump sources for OPOs. A serious limitation with regard to all-solid-state systems is that the Ho ion does not exhibit suitable absorption features that match the existing commercial diodes and hence many researchers used Tm as sensitizer. However, up-conversion losses in the Tm ions lead to poor efficiency of the $^{5}I$ → $^{5}I$ transition in Ho. On the contrary, direct excitation of the $^{5}I$ level of Ho around 1.9 µm offers advantages to achieve higher efficiencies and higher output powers due to minimal thermal load. This is the ultimate solution for power scaling of Ho lasers [1]. Many fluoride and oxide crystals were shown to be suitable as Ho hosts but little attention was paid to the monoclinic double tungstates with general formula KRE(WO4)2 (KREW) where RE=(Y, Gd, Lu), known as very efficient laser hosts at intermediate power levels [2]. In this work we demonstrate continuous-wave (CW) laser action of Ho in KLuW crystal near 2.08 µm at room temperature using in-band pumping by recently developed laser diodes operating in the 1.9 µm range. The laser performance is compared with the other members of the same family of crystals.
Starting Page	1
Ending Page	1
File Size	233021
Page Count	1
File Format	PDF
ISBN	9781457705335
e-ISBN	9781457705328
DOI	10.1109/CLEOE.2011.5942459
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-22
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrooptical waveguides
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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Continuous-wave lasing of monoclinic Ho:KLu(WO4)2 under in-band excitation by a diode-pumped Tm:KLu(WO4)2 laser

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