NDLI: Generation of high power (> 7W) yellow-orange radiation by frequency doubling of GaInNAs-based semiconductor disk laser

Content Provider	IEEE Xplore Digital Library
Author	Leinonen, T. Puustinen, J. Korpijarvi, V. Harkonen, A. Guina, M. Epstein, R.J.
Copyright Year	2011
Description	Author affiliation: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Finland (Leinonen, T.; Puustinen, J.; Korpijarvi, V.; Harkonen, A.; Guina, M.) \|\| Areté Associates, 1225 Ken Pratt Blvd, Suite 206, Longmont CO 80501, United States (Epstein, R.J.)
Abstract	We report recent developments of GaInNAs-based semiconductor disk lasers (SDLs) emitting at around 590 nm. GaInNAs/GaAs (dilute nitride) quantum-wells enable lasing at a wavelength of ∼1180 nm with reduced indium content and hence reduced lattice strain as compared to InGaAs quantum wells [1], leading to SDL operation with output powers of more than 11W using a single gain chip [2]. The importance of dilute nitride material system for generating high power yellow-orange radiation via frequency doubling of ∼1180 nm SDLs has been recently recognized [3]. In the current experiments we use a single gain mirror cavity (shown in Fig. 1) and investigate the conversion efficiency, power stability, and polarization of the frequency converted output beam. The SDL gain mirror had 10 GaInNAs QWs and was grown by molecular beam epitaxy (MBE). The gain chips were capillary-bonded to a wedged diamond heat spreader. An antireflective coating was deposited on top of the heat spreader to alleviate parasitic reflection from the surface of the wedged diamond. The component was attached to a water-cooled copper mount. For frequency doubling, a 4 mm long type-I critically phase-matched beta barium borate (BBO) crystal was placed inside the laser cavity (between folding mirror and the plane mirror).
Starting Page	1
Ending Page	1
File Size	244427
Page Count	1
File Format	PDF
ISBN	9781457705335
e-ISBN	9781457705328
DOI	10.1109/CLEOE.2011.5942572
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-22
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mirrors
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
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