NDLI: SiGe HBT-based active cold load: Design, characterization and stability measurements

Content Provider	IEEE Xplore Digital Library
Author	de la Jarrige, E.L. Escotte, L. Gonneau, E. Goutoule, J.M.
Copyright Year	2011
Description	Author affiliation: EADS-Astrium, Toulouse 31402, France (Goutoule, J.M.) \|\| CNRS; LAAS, Université de Toulouse; UPS, INSA, INP, ISAE; UT1, UTM, LAAS, F-31077 Cedex 4, France (de la Jarrige, E.L.; Escotte, L.) \|\| LERISM, Université de Toulouse; UPS, 31062, France (Gonneau, E.)
Abstract	We report experimental results concerning the noise performance and the stability of an active cold load (ACL) realized with an SiGe heterojunction bipolar transistor at microwave frequency (1.4 GHz). The ACL exhibits return loss higher than 35 dB and a noise temperature less than 66 K. Stability measurements performed over 4 months with a dedicated noise injection radiometer indicates that this active load is very stable.
Starting Page	332
Ending Page	335
File Size	683077
Page Count	4
File Format	PDF
ISBN	9781457701894
e-ISBN	9781457701924
DOI	10.1109/ICNF.2011.5994335
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-12
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Stability Noise Active cold load Stability analysis Noise temperature Circuit stability SiGe heterojunction bipolar transistor Microwave radiometry Noise measurement Thermal stability Radiometer
Content Type	Text
Resource Type	Article

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SiGe HBT-based active cold load: Design, characterization and stability measurements