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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chunbao Ding Wanrong Zhang Hongyun Xie Liang Chen Pei Shen Donghui Zhang Boyu Liu Yongqiang Zhou Zhengjie Guo Zhiyi Lu |
| Copyright Year | 2011 |
| Description | Author affiliation: School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China (Chunbao Ding; Wanrong Zhang; Hongyun Xie; Liang Chen; Pei Shen; Donghui Zhang; Boyu Liu; Yongqiang Zhou; Zhengjie Guo; Zhiyi Lu) |
| Abstract | A SiGe HBT low-noise amplifier (LNA) for UWB application is presented. According to the analysis for noise of common base transistor, noise canceling structure for SiGe HBT is proposed to reduce the noise arising from common transistor, thus reduce the noise of LNA. Meanwhile it also compensate the gain of the LNA, thus improves the gain flatness. The chip layout has been designed, its area is 0.56×0.53 $mm^{2}.$ The simulation results of the LNA demonstrate that in the range of UWB, the noise figure is reduced 2 dB compared with the case without noise canceling, the gain is 16.4∼17.4, gain flatness is ±0.5dB, linearity is •6dBm. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 163184 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781457719981 |
| e-ISBN | 9781457719974 |
| e-ISBN | 9781457719967 |
| DOI | 10.1109/EDSSC.2011.6117714 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-11-17 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Noise Silicon germanium Gain Heterojunction bipolar transistors Layout Noise measurement SiGe heterojunction bipolar transistor Noise canceling Low noise amplifier |
| Content Type | Text |
| Resource Type | Article |
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