NDLI: A single-stage cryogenic LNA with low power consumption using a commercial SiGe HBT

Content Provider	IEEE Xplore Digital Library
Author	Mani, H. Mauskopf, P.
Copyright Year	2014
Description	Author affiliation: Sch. of Earth & Space Exploration, Arizona State Univ., Tempe, AZ, USA (Mani, H.; Mauskopf, P.)
Abstract	A cryogenically cooled low noise amplifier (LNA) has been designed, built and tested at the Astronomy Instrumentation Laboratory at Arizona State University. The LNA uses low cost, off the shelf commercially available low noise SiGe hetero junction bipolar transistor (HBT) in a single stage surface mount package. The built LNA has been measured in a calibrated noise/gain/S-parameters setup and the data shows the LNA has a noise temperature of as low as 5K (or about 0.074dB noise figure) and more than 20dB of Gain on the 100MHz-1GHz band. The input and output of the LNA are matched to 50 Ohm, an S11 and S22 of less than -10dB at most frequencies have been measured. All these parameters were measured at different transistor bias points and power dissipations. The amplifier was operated at as low as 0.7mW power dissipation with a measured 8K of noise (or about 0.12dB Noise figure) and 20dB of Gain at 500MHz. The developed amplifier offered good performance at an extremely low cost and with a very short development time, this amplifier can be useful to a variety low temperature physics experiments.
Starting Page	17
Ending Page	20
File Size	367408
Page Count	4
File Format	PDF
ISBN	9781479948420
DOI	10.1109/WOLTE.2014.6881015
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-07-07
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Cryogenic SiGe Heterojunction bipolar transistor Current measurement Noise Cryogenics Low noise amplifier Extraterrestrial measurements Noise temperature Transistors Noise measurement Feedback amplifier
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration

A cryogenic SiGe low noise amplifier developed for radio astronomy

Hybrid LNAs with SiGe HBTs on 7th generation BiCMOS process

Hybrid LNAs with SiGe HBTs on 7th generation BiCMOS process

Experimental cryogenic modeling and noise of SiGe HBTs

A 0.1–5 GHz Cryogenic SiGe MMIC LNA

Ka-Band SiGe HBT Low Noise Amplifier Design for Simultaneous Noise and Input Power Matching

Design of SiGe HBT UWB low noise amplifier employing broadband noise canceling

Ka-Band SiGe HBT Low Phase Imbalance Differential 3-Bit Variable Gain LNA

A single-stage cryogenic LNA with low power consumption using a commercial SiGe HBT

Similar Documents

Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration

A cryogenic SiGe low noise amplifier developed for radio astronomy

Hybrid LNAs with SiGe HBTs on 7th generation BiCMOS process

Hybrid LNAs with SiGe HBTs on 7th generation BiCMOS process

Experimental cryogenic modeling and noise of SiGe HBTs

A 0.1–5 GHz Cryogenic SiGe MMIC LNA

Ka-Band SiGe HBT Low Noise Amplifier Design for Simultaneous Noise and Input Power Matching

Design of SiGe HBT UWB low noise amplifier employing broadband noise canceling

Ka-Band SiGe HBT Low Phase Imbalance Differential 3-Bit Variable Gain LNA

A single-stage cryogenic LNA with low power consumption using a commercial SiGe HBT