NDLI: Low-frequency noise and stress-induced degradation in LDMOS

Content Provider	IEEE Xplore Digital Library
Author	Mahmud, M.I. Celik-Butler, Z. Hao, P. Hou, F. Amey, B. Khan, T. Huang, W.
Copyright Year	2011
Description	Author affiliation: University of Texas at Arlington, Electrical Engg. Dept., P.O. Box 19072, 76019, USA (Mahmud, M.I.; Celik-Butler, Z.) \|\| Texas Instruments Incorporated, Dallas, 75243, USA (Hao, P.; Hou, F.; Amey, B.) \|\| Freescale Semiconductor Inc., Tempe AZ 85284, USA (Khan, T.; Huang, W.)
Abstract	Low frequency noise (LFN) characteristics of high voltage double reduced-surface-field LDMOS with SiO2 as gate dielectric is investigated and the effect of DC stressing has been observed. It has been found that the LDMOS does not follow typical noise behavior of ordinary MOSFETs as extended drain attributes a significant role at higher gate overdrive voltages. Here, separation of the overall measured noise components to three distinct regions is proposed: the channel, the resistive region under the gate oxide and that under the field oxide layer. Induced and inherent noise components coming from the extended drain region under the gate and field oxides are separated from the channel noise by performing noise measurements in DNWell standalone resistors.
Starting Page	352
Ending Page	355
File Size	1063350
Page Count	4
File Format	PDF
ISBN	9781457701894
e-ISBN	9781457701924
DOI	10.1109/ICNF.2011.5994341
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-12
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Resistors Resistance Induced and inherent noise Noise DNWell LDMOS Logic gates 1/ƒ noise RESURF Noise measurement Stress
Content Type	Text
Resource Type	Article

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Correlation of 1/ƒ noise and high-voltage-stress-induced degradation in LDMOS

Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors

Effect of Stress-Induced Degradation in LDMOS $hbox{1}/f$ Noise Characteristics

Review of LDMOS time dependent degradation based on low-frequency noise modeling

A Physics-Based Analytical $hbox{1}/f$ Noise Model for RESURF LDMOS Transistors

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