NDLI: Sources of 1/f noise in Si delta-doped Schottky diodes

Content Provider	IEEE Xplore Digital Library
Author	Klyuev, A.V. Shmelev, E.I. Yakimov, A.V.
Copyright Year	2011
Description	Author affiliation: Radiophysics Faculty, Lobachevsky State University, Gagarin Avenue 23, Nizhni Novgorod 603950, Russia (Klyuev, A.V.; Shmelev, E.I.; Yakimov, A.V.)
Abstract	The model of Schottky diode with δ-doping is suggested. This one is aimed for the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance Rb of base and contacts, and the possible leakage Ileak are taken into account. Parameters of the diode are defined from the analysis of the current-voltage characteristic. For an explanation of experimental data the model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs - model) and model of 1/f noise in leakage current are suggested. The analysis of the 1/f noise spectrum allows assuming that, in investigated diodes, on $10^{6}$ atoms of main impurity there are 1–10 atoms of extraneous impurity the ionization energy of which may stochastically be modulated.
Starting Page	102
Ending Page	105
File Size	448482
Page Count	4
File Format	PDF
ISBN	9781457701894
e-ISBN	9781457701924
DOI	10.1109/ICNF.2011.5994273
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-12
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistance Schottky diodes Fluctuations Delta doping Impurities Noise 1/ƒ noise Semiconductor process modeling Schottky diode Current-voltage characteristic
Content Type	Text
Resource Type	Article

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