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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ning Lu Dewey, B. |
| Copyright Year | 2008 |
| Description | Author affiliation: IBM Electron. Design Autom., Fishkill, NY (Dewey, B.) || Semicond. R&D Center, IBM, Essex Junction, VT (Ning Lu) |
| Abstract | We present an innovative and comprehensive approach to characterize and model FET source/drain diffusion resistance. We present a set of new SPICE models for the parasitic resistance in FET source and drain regions. Our FET source/drain diffusion resistance model has been verified with field solver simulation results, and is found to be very accurate over a wide range of parameter values. We also present a set of micro testing structures to measure and characterize diffusion resistance. This approach has been validated using hardware data from a 65 nm SOI technology. |
| Starting Page | 281 |
| Ending Page | 284 |
| File Size | 477726 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424420186 |
| DOI | 10.1109/CICC.2008.4672076 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-09-21 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | FETs Electric resistance Electrical resistance measurement Semiconductor device modeling Current Silicides SPICE Hardware Silicon USA Councils |
| Content Type | Text |
| Resource Type | Article |
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