NDLI: Stress-driven 3D-IC placement with TSV keep-out zone and regularity study

Content Provider	IEEE Xplore Digital Library
Author	Athikulwongse, K. Chakraborty, A. Jae-Seok Yang Pan, D.Z. Sung Kyu Lim
Copyright Year	2010
Description	Author affiliation: School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA (Athikulwongse, K.; Sung Kyu Lim) \|\| Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas, USA (Chakraborty, A.; Jae-Seok Yang; Pan, D.Z.)
Abstract	Through-silicon via (TSV) fabrication causes tensile stress around TSVs which results in significant carrier mobility variation in the devices in their neighborhood. Keep-out zone (KOZ) is a conservative way to prevent any devices/cells from being impacted by the TSV-induced stress. However, owing to already large TSV size, large KOZ can significantly reduce the placement area available for cells, thus requiring larger dies which negate improvement in wirelength and timing due to 3D integration. In this paper, we study the impact of KOZ dimension on stress, carrier mobility variation, area, wirelength, and performance of 3D ICs. We demonstrate that, instead of requiring large KOZ, 3D-IC placers must exploit TSV stress-induced carrier mobility variation to improve the timing and area objectives during placement. We propose a new TSV stress-driven force-directed 3D placement that consistently provides placement result with, on average, 21.6% better worst negative slack (WNS) and 28.0% better total negative slack (TNS) than wirelength-driven placement.
Starting Page	669
Ending Page	674
File Size	727273
Page Count	6
File Format	PDF
ISBN	9781424481934
ISSN	10923152
e-ISBN	9781424481941
DOI	10.1109/ICCAD.2010.5654245
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Through-silicon vias Three dimensional displays Stress Timing Springs Electron mobility Force
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Computer Science Applications Software

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