NDLI: Structural, electrical and surface static charge investigation of TiO2 thin films doped with different amount of vanadium

Content Provider	IEEE Xplore Digital Library
Author	Prociow, E.L. Domaradzki, J. Sieradzka, K. Kaczmarek, D. Mazur, M.
Copyright Year	2009
Description	Author affiliation: Faculty of microsystem Electronics and Photonics, Wroclaw University of Technology, Poland (Prociow, E.L.; Domaradzki, J.; Sieradzka, K.; Kaczmarek, D.; Mazur, M.)
Abstract	In this work structural, electrical and antistatic properties of TiO2 thin films doped with different amount of V have been presented. It was shown that the doped thin films are semiconductors in room temperature. The amount of V dopant has a great influence on resistivity of prepared thin films similarly as annealing at 400°C. The time of static charge dissipation from the thin films surface dropped from 1.284 s (for undoped TiO2) to 0.508 s (for doped with V). Although variation in the amount of V dopant in the range from 19 to 23 at. % results in three orders of magnitude change of resistivity, all doped thin films displayed similar antistatic properties.
Starting Page	1
Ending Page	5
File Size	1294019
Page Count	5
File Format	PDF
ISBN	9781424442607
DOI	10.1109/ISSE.2009.5206968
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-13
Publisher Place	Czech Republic
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Semiconductor thin films Dielectric thin films Sputtering Crystallization Surface topography Scanning electron microscopy Temperature Conductivity Annealing
Content Type	Text
Resource Type	Article

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