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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xiang Gao Dongyan Ding Zhi Chen Ming Li Dali Mao |
| Copyright Year | 2007 |
| Description | Author affiliation: Shanghai Jiao Tong Univ., Shanghai (Xiang Gao; Dongyan Ding) |
| Abstract | A transition layer of Ni-P coating will help enhance the hydrogen sensing stability of Pd films supported by silicon wafers. In this work, Pd films were electrodeposited on electroless Ni-P coated silicon wafers. The effect of deposition parameters on the microstructure (especially the morphology) of Ni-P coatings and Pd films were investigated. Experimental results indicated that a lower pH value of electroless plating solution and a longer electroless plating time could increase the size of Ni-P nodular particles. In addition, the morphology of Pd films was shaped by the nanostructures of the Ni-P coating. An optimized Pd/Ni-P structures is expected to present good hydrogen sensing performance. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1697786 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424413911 |
| DOI | 10.1109/ICEPT.2007.4441492 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-08-14 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Palladium Semiconductor films Coatings Substrates Hydrogen Silicon Morphology Stability Microstructure Nanostructures |
| Content Type | Text |
| Resource Type | Article |
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