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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rhyner, R. Luisier, M. |
| Copyright Year | 2013 |
| Description | Author affiliation: ETH Zurich, Zürich, Switzerland (Rhyner, R.; Luisier, M.) |
| Abstract | In this paper, an atomistic quantum transport simulator coupling electron and phonon transport is used to investigate the influence of self-heating on the performance of ultra-scaled gate-all-around Si nanowire field-effect transistors. By driving not only the electron, but also the phonon population out-of-equilibrium, the developed simulation approach ensures that both current and energy conservation are satisfied, thus giving rise to local variations of the lattice temperature. As a consequence of the increased electron-phonon interactions, it is found that the considered nano-devices operate at about 50% of their ballistic limit, even with a gate length as short as 5 nm. Furthermore, the formation of hot spots close to the drain contact of the transistors is clearly visible with a maximum effective temperature of almost 500 K. |
| File Size | 342936 |
| File Format | |
| ISBN | 9781479923069 |
| ISSN | 2156017X |
| DOI | 10.1109/IEDM.2013.6724734 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-12-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Phonons Silicon Logic gates Scattering Sociology Statistics Heating |
| Content Type | Text |
| Resource Type | Article |
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