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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Changwook Jeong Hong-Hyun Park Dhar, S. Sooyoung Park Kwangseok Lee Seonghoon Jin Woosung Choi Ui-Hui Kwon Keun-Ho Lee Youngkwan Park |
| Copyright Year | 2013 |
| Description | Author affiliation: Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwasung, South Korea (Changwook Jeong; Dhar, S.; Sooyoung Park; Kwangseok Lee; Ui-Hui Kwon; Keun-Ho Lee; Youngkwan Park) || Samsung Semicond. Inc., San Jose, CA, USA (Hong-Hyun Park; Seonghoon Jin; Woosung Choi) |
| Abstract | For devices beyond the 14nm node, it is important to investigate performance boosters such as high mobility channels. Although pure Ge offers a higher hole mobility than Si, conventional problems like surface passivation and its integration with Si makes SiGe alloy with low Ge mole fraction a viable option. The significance of alloy scattering, however, has been widely debated [1-3], so the accurate modeling of alloy scattering in SiGe channel has become an important issue to predict the performance of future SiGe-based FETs. Usually, the calculation of alloy scattering mobility assumes an alloy scattering center in a simple analytical form with some fitting parameters, which is a good practical approach but has a limited predictability. In this paper, an atomistic tight-binding simulation is used to study alloy scattering in SiGe-based FETs, and to compare with experimental data. We conclude (i) although it is essentially impossible to avoid alloy scattering in SiGe material, (ii) high-mobility is indeed achieved in SiGe channel by combining lattice-mismatch stresses from Si virtual substrate with stresses from Source/Drain(SD) stressor. |
| File Size | 624068 |
| File Format | |
| ISBN | 9781479923069 |
| ISSN | 2156017X |
| DOI | 10.1109/IEDM.2013.6724614 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-12-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Metals Scattering Silicon germanium Stress Silicon Field effect transistors Charge carrier density |
| Content Type | Text |
| Resource Type | Article |
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