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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chih-Chao Yang Szu-Hung Chen Jia-Min Shieh Wen-Hsien Huang Tung-Ying Hsieh Chang-Hong Shen Tsung-Ta Wu Hsing-Hsiang Wang Yao-Jen Lee Fu-Ju Hou Ci-Ling Pan Kuei-Shu Chang-Liao Chenming Hu Fu-Liang Yang |
| Copyright Year | 2013 |
| Description | Author affiliation: Nat. Nano Device Labs., Hsinchu, Taiwan (Chih-Chao Yang; Szu-Hung Chen; Jia-Min Shieh; Wen-Hsien Huang; Tung-Ying Hsieh; Chang-Hong Shen; Tsung-Ta Wu; Hsing-Hsiang Wang; Yao-Jen Lee; Fu-Ju Hou; Fu-Liang Yang) || Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA (Chenming Hu) || Dept. of Phys., Nat. Tsing Hua Univ., Hsinchu, Taiwan (Ci-Ling Pan) || Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan (Kuei-Shu Chang-Liao) |
| Abstract | A sequential layered integration technology that can fabricate 3D stackable epi-like Si FETs with and without metal back gate (MBG) under sub-400°C are proposed in this article. With laser crystallized epi-like Si and CMP thinning processes for channel fabrication, 3D stackable ultra thin body (UTB) n/p-MOSFETs with low-subthreshold swings (88 and 121 mV/dec.) and high on-currents (121 and 62 μA/μm) are demonstrated. With additional metal back gate structure, UTB devices can be desirably operated in a positive or negative threshold voltage range with γ values of 0.51 (n-MOSFETs) and 0.56 (p-MOSFETs) for favoring its applications in 3D logic circuits. In addition, such thin and high quality channel and metal back gate scheme is not only promising for conventional p-n junction device but also junctionless (JL) scheme, which can simplify the fabrication and achieve further scaling. |
| File Size | 1394230 |
| File Format | |
| ISBN | 9781479923069 |
| ISSN | 2156017X |
| DOI | 10.1109/IEDM.2013.6724719 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-12-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Logic gates Three-dimensional displays MOSFET Metals MOSFET circuits Lasers |
| Content Type | Text |
| Resource Type | Article |
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