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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rui Zhang Linsen Bie Tze-Ching Fung Yu, E.K.-H. Chumin Zhao Kanicki, J. |
| Copyright Year | 2013 |
| Description | Author affiliation: Qualcomm MEMS Technol., Inc., San Jose, CA, USA (Tze-Ching Fung) || Solid-state Electron. Lab., Univ. of Michigan, Ann Arbor, MI, USA (Rui Zhang; Linsen Bie; Yu, E.K.-H.; Chumin Zhao; Kanicki, J.) |
| Abstract | In this paper, for the first time, we report on high performance amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) based passive pixel sensor (PPS) and active pixel sensor (APS) circuits. Experimental results show that single-TFT PPS with a pitch length of 50μm can achieve a signal charge gain approaching to unity (Gain=0.93) under a fast readout time of 20μs and a dynamic range of 40dB. APS based on three a-IGZO TFTs, with a pitch length of ~100μm, established a high dynamic range of more than 60dB. 2-TFTs half active pixel sensor (H-APS) testing circuits are also designed to investigate the voltage gain $(A_{V}=Δ_{VOUT}/ΔV_{G})$ properties for the APS circuit in this work. For the a-IGZO APS, $A_{V}$ is measured to be ~1.25, and through normalization of the pixel capacitance $(C_{PIX})$ to a common value of 5pF, a large signal charge gain of 25 is obtained. |
| File Size | 784137 |
| File Format | |
| ISBN | 9781479923069 |
| ISSN | 2156017X |
| DOI | 10.1109/IEDM.2013.6724703 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-12-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thin film transistors Testing Current measurement Capacitors Dynamic range Active pixel sensors Glass |
| Content Type | Text |
| Resource Type | Article |
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