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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jihyun Seo Kyoungrok Han Taeun Youn Hye-Eun Heo Sanghyun Jang Jongwook Kim Honam Yoo Joowon Hwang Cheolhoon Yang Heeyoul Lee Byungkook Kim Eunseok Choi Keumhwan Noh Byoungki Lee Byungseok Lee Heehyun Chang Sungkye Park Kunok Ahn Seokkiu Lee Jinwoong Kim Seokhee Lee |
| Copyright Year | 2013 |
| Description | Author affiliation: Flash Tech Dev. Div., SK hynix Inc., Icheon, South Korea (Kyoungrok Han; Taeun Youn; Jongwook Kim; Honam Yoo; Joowon Hwang; Cheolhoon Yang; Byungkook Kim; Keumhwan Noh; Heehyun Chang; Kunok Ahn; Jinwoong Kim) || R&D Div., SK hynix Inc., Icheon, South Korea (Jihyun Seo; Hye-Eun Heo; Sanghyun Jang; Heeyoul Lee; Eunseok Choi; Byoungki Lee; Byungseok Lee; Sungkye Park; Seokkiu Lee; Seokhee Lee) |
| Abstract | Our Middle-1X nm MLC NAND (M1X) flash cell is intensively characterized with respect to reliability and manufacturability. For the first time, the novel active air-gap technology is applied to alleviate the drop of channel boosting potential of program inhibition mode, BL-BL interference is reduced to our 2y nm node level by this novel integration technology. Furthermore, it also relaxes the effect of process variation like EFH (Effective Field oxide Height) on cell Vt distribution. Better endurance and retention characteristics can be obtained by p+ doped poly gate. By optimization of active air-gap profile and poly doping level, M1X nm MLC NAND flash memory has been successfully implemented with superior manufacturability and acceptable reliability. |
| File Size | 541614 |
| File Format | |
| ISBN | 9781479923069 |
| ISSN | 2156017X |
| DOI | 10.1109/IEDM.2013.6724554 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-12-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Air gaps Doping Logic gates Interference Flash memories Reliability Bit error rate |
| Content Type | Text |
| Resource Type | Article |
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