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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jong-Ho Bae Sunkyu Hwang Jongmin Shin Hyuck-In Kwon Chan Hyeong Park Hyoji Choi Jong-Bong Park Jongseob Kim Jongbong Ha Kiyeol Park Jaejoon Oh Jaikwang Shin U-In Chung Kwang-Seok Seo Jong-Ho Lee |
| Copyright Year | 2013 |
| Description | Author affiliation: Sch. of EECS & ISRC, Seoul Nat. Univ., Seoul, South Korea (Jong-Ho Bae; Jongmin Shin; Kwang-Seok Seo; Jong-Ho Lee) || Sch. of EEE, Chung-Ang Univ., Seoul, South Korea (Hyuck-In Kwon) || Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea (Sunkyu Hwang; Hyoji Choi; Jong-Bong Park; Jongseob Kim; Jongbong Ha; Kiyeol Park; Jaejoon Oh; Jaikwang Shin; U-In Chung) || Dept. of ECE, Kwangwoon Univ., Seoul, South Korea (Chan Hyeong Park) |
| Abstract | Trap-related transient characteristics and RTN in p-GaN gate HEMT were characterized, for the first time to our knowledge. Current conduction mechanism in DC $I_{G}$ is explained based on proposed model. Hopping conduction mechanism is responsible for $I_{G}$ at $V_{G}$ <; 0. $I_{G}$ at $V_{G}$ > 0 seems to be controlled by thermionic emission and affected by the action of floating-base n(W)-p(p-GaN)-n(AlGaN/GaN) bipolar transistor. Transient current behavior is related to the DC conduction mechanism and could be explained by thermal emission and charge trapping in p-GaN and AlGaN layers. Measured transient behavior of gate capacitance corresponds to that of the transient currents. Hole trapping into the AlGaN layer and existence of percolation path in gate and drain currents are verified by analyzing RTNs in $I_{G}$ and $I_{D}.$ Trap position and activation energy regarding RTN are firstly extracted. RTN time constants are similar to those in $I_{G}$ and $I_{D}$ transient behavior. |
| File Size | 843799 |
| File Format | |
| ISBN | 9781479923069 |
| ISSN | 2156017X |
| DOI | 10.1109/IEDM.2013.6724733 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-12-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Aluminum gallium nitride Transient analysis Logic gates Gallium nitride Electron traps HEMTs |
| Content Type | Text |
| Resource Type | Article |
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