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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yoh, K. Taniguchi, H. Kiyomi, K. Inoue, M. Sakamoto, R. |
| Copyright Year | 1991 |
| Description | Author affiliation: Dept. of Electr. Eng., Osaka Inst. of Technol., Japan (Yoh, K.; Taniguchi, H.; Kiyomi, K.; Inoue, M.; Sakamoto, R.) |
| Abstract | The authors have fabricated quantum wires on the InAs/AlGaSb heterostructure by utilizing electron beam lithography and wet-chemical etching. The electron confinement into quasi-one-dimensional freedom of motion was verified by magnetoresistance measurement at 4.2 K. In two terminal devices with extremely narrow channel structure, quantized drain current through drain-induced barrier lowering has been observed at 77 K. Coulomb oscillations and Coulomb staircases were seen to overlap with staircase u characteristics reflecting the small parasitic capacitance between terminals. Material, structural, and temperature effects on these devices were examined.< |
| Starting Page | 813 |
| Ending Page | 816 |
| File Size | 352073 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780302435 |
| ISSN | 01631918 |
| DOI | 10.1109/IEDM.1991.235300 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-12-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Quantization Wires Electron beams Lithography Wet etching Magnetic confinement Magnetoresistance Capacitance measurement Current measurement Motion measurement |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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