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One-dimensional electron transport in InAs/(AlxGa1-x)Sb SQWs
| Content Provider | Scilit |
|---|---|
| Author | Yoh, K. Taniguchi, H. Kiyomi, K. Sakamoto, R. Inoue, M. |
| Copyright Year | 1992 |
| Description | Journal: Semiconductor Science and Technology The authors report 4.2 K magnetoresistance measurements of InAs quantum wires based on AlGaSb/InAs/AlGaSb heterostructures grown by molecular beam epitaxy (MBE). The widths of the channel have been defined by electron-beam lithography and wet chemical etching. In the low magnetic field region, the Landau plots deviated from the linear relations indicating the lateral confinement. In the high magnetic field region, pronounced spin-splitting of Landau levels was observed in quantum wires compared with two-dimensional electron gas. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/7/3B/073/pdf |
| Ending Page | B298 |
| Page Count | 4 |
| Starting Page | B295 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/7/3b/073 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 3B |
| Volume Number | 7 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1992-03-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Applied Physics Molecular Beam Epitaxy Quantum Wire Electron Beam Lithography Electron Transport Two Dimensional Electron Gas Magnetic Field Landau Level |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |