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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bassous, E. Scheuermann, M. Kesan, V.P. Ritter, M. Halbout, J.-M. Iyer, S.S. |
| Copyright Year | 1991 |
| Description | Author affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA (Bassous, E.; Scheuermann, M.; Kesan, V.P.; Ritter, M.; Halbout, J.-M.; Iyer, S.S.) |
| Abstract | The authors have fabricated and characterized interdigitated silicon metal-semiconductor-metal photodetectors (MSM-PDs) using a self-aligned PtSi Schottky barrier metallurgy and SiO/sub 2/ passivation in a VLSI-compatible process. These MSM-PDs are optimal for high speed applications at wavelengths <700 nm. The detectors show a classic Si spectral response with a 3 dB cut-off frequency in excess of 1.1 GHz at a wavelength of 630 nm. DC responsivities in excess of 0.3 A/W were measured on devices with a PtSi electrode spacing of 1.6 mu m and a total device area of 6375 mu m/sup 2/ of which 46% was active. The integrated detectors have potential applications in short-wavelength optical interconnects and optical storage systems.< |
| Starting Page | 187 |
| Ending Page | 190 |
| File Size | 308155 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780302435 |
| ISSN | 01631918 |
| DOI | 10.1109/IEDM.1991.235470 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-12-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Photodetectors Optical interconnections Schottky barriers Passivation Detectors Cutoff frequency Area measurement Wavelength measurement Electrodes |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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