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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zurn, S. Mei, Q. Ye, C. Tamagawa, T. Polla, D.L. |
| Copyright Year | 1991 |
| Description | Author affiliation: Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA (Zurn, S.; Mei, Q.; Ye, C.; Tamagawa, T.; Polla, D.L.) |
| Abstract | Solid-state planar micromachining techniques have been applied in the fabrication of two types of vacuum microelectronic devices. Cold-cathode devices based on field emission and hot-cathode devices based on thermal-field emission have been fabricated for possible use in high-speed, high-operating-temperature device applications. Polycrystalline silicon has been used as the cathode, anode, and gate material in these device structures. On-chip vacuum-sealed cavities have been formed through the micromachining of polycrystalline silicon microbridges. An elevated and sealed polycrystalline silicon emission filament has also been formed by surface micromachining techniques. The measured transconductance of the hot-cathode triode is 3.4 mu A/V. Device operation and measured current versus voltage characteristics are presented for these devices.< |
| Starting Page | 205 |
| Ending Page | 208 |
| File Size | 391521 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780302435 |
| ISSN | 01631918 |
| DOI | 10.1109/IEDM.1991.235466 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-12-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Micromachining Silicon Current measurement Solid state circuits Fabrication Vacuum technology Microelectronics Cathodes Anodes Transconductance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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